Search results for "Thin Film"
showing 10 items of 1200 documents
Characterization of Crystalline Structure and Morphology of Ga<sub>2</sub>O<sub>3</sub> Thin Film Grown by MOCVD Technique
2016
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.
Yttrium-doped hematite photoanodes for solar water splitting: Photoelectrochemical and electronic properties
2018
Abstract We investigate yttrium-doped hematite thin-film photoelectrochemical properties and find yttrium incorporation to amply improve the performance as a photoanode for water splitting under visible light. We used the spray pyrolysis method to prepare a set of yttrium doped Fe2-xYxO3 (x = 0, 0.05, 0.10, 0.15, 0.2) thin films (thickness below 500 nm) on glass and transparent conductive oxide coated glass slides. Using a substitutional homovalent (Y3+) dopant, the effect on functionality is rationalised as a combined effect on the electronic structure and small polaron mobility from the lattice structure, impurity levels, lattice stability and variance in hybridisation. The photoelectroch…
Influence of semiconducting electrodes on properties of thin ferroelectric films
2005
The influence of semiconducting electrodes on the properties of thin ferroelectric films is considered within the framework of the phenomenological Ginzburg-Landau theory. The contribution of the electric field produced by charges in the electrodes allowing for the screening length of the carriers is included in the functional of the free energy and so in the Euler-Lagrange equation for the film's polarization. Application of the variational method to the solution of this equation allows the transformation of the free energy functional into a conventional type of free energy with renormalized coefficients. The obtained dependence of the coefficients on the film thickness, temperature, elect…
MOCVD growth of CdO very thin films: Problems and ways of solution
2016
Abstract In this paper the growth of CdO by the MOCVD technique at atmospheric pressure has been studied in order to achieve very thin films of this material on r-sapphire substrates. The growth evolution of these films was discussed and the existence of a threshold thickness, below which island-shaped structures appear, was demonstrated. Some alternatives to reduce this threshold thickness have been proposed in the frame of the analysis of the crystal growth process. The morphology and structural properties of the films were analyzed by means of SEM and HRXRD. High-quality flat CdO samples were achieved with thicknesses up to 20 nm, which is five times thinner than the values previously re…
Strain-induced magnetic anisotropies in Co films on Mo(110)
2004
Tailoring of highly porous SnO2 and SnO2-Pd thin films
2019
Abstract Tin oxide is a material that attracts attention due to variety of technological applications. The main parameters that influence its properties are morphology, crystalline structure and stoichiometry. Researchers try to develop nanostructured thin films with tunable parameters that would conform its technological applications. Herein, we report on the preparation and characterization of highly porous SnO2 and Pd-doped SnO2 thin films. These films were deposited in the form of nanorods with controllable geometry. Such morphology was achieved by utilizing glancing angle deposition (GLAD) with assisted magnetron sputtering. This arrangement allowed preparation of slanted pillars, zig-…
Carbon Nanotubes: In-Situ Growth of Ultrathin Films of NiFe-LDHs: Towards a Hierarchical Synthesis of Bamboo-Like Carbon Nanotubes (Adv. Mater. Inter…
2014
Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy
2008
Abstract In this paper we investigate the band gap renormalization in heavily Ga-doped ZnO thin films deposited by pulsed laser deposition on C -plane sapphire and mica substrates. Thin films were studied by ultraviolet photoelectron spectroscopy and also by optical measurements under high pressure. The Fermi-level shift, as obtained from ultraviolet photoelectron experiments, exhibits a relatively small and positive shift (about 0.3 eV) with respect to the valence band for increasing electron concentrations up to 1021 cm−3. The optical gap exhibits a much larger increase (0.6 eV) for the same concentration range. Absorption measurements under pressure show that the pressure coefficient of …
When are thin films of metals metallic? Part III
1996
Abstract A large amount of experimental information has indicated that very thin films of metallic elements can exhibit nonmetallic behavior, even on metal substrates. These films undergo a gradual nonmetal to metal transition with increasing film density or thickness. The nonmetallic behavior can be related to electron localization due to strong electron-electron correlation in low dimensional systems, as indicated by the strong enhancement of electron effective mass. The evolution in the electronic structure associated with the nonmetal to metal transition bears a striking resemblance to the behavior observed for free metal clusters. Part I [1], outlined the general concepts of a nonmetal…
Monte Carlo Study of Critical Point Shifts in Thin Films
2000
We report preliminary results of Monte Carlo simulations of critical point shifts in thin slit-like capillaries. By making use of the isomorphism with an Ising model subject to bulk and surface fields and employing a multi-cluster update algorithm with ghost-spin term we obtain the coexistence curve and the behavior at the critical point for various film thicknesses D.